| Codice prodotto | BCR198E6327HTSA1 |
|---|---|
| Codice produttore | BCR198E6327HTSA1 |
| Categoria | Bipolar Transistors - Pre-Biased |
| Produttore | Infineon |
| Case/Package | SOT |
| Collector Base Voltage (VCBO) | 10 V |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 300 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Contact Plating | Tin |
| Current Rating | -70 mA |
| Element Configuration | Single |
| Halogen Free | Not Halogen Free |
| Height | 1 mm |
| hFE Min | 70.0 |
| Input Resistance | 47 kΩ |
| Lead Free | Lead Free |
| Length | 2.9 mm |
| Lifecycle Status | NRND |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 100 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 200 mW |
| Min Operating Temperature | -65 °C |
| Mount | Surface Mount |
| Number of Pins | 3.0 |
| Package Quantity | 3000.0 |
| Packaging | |
| Polarity | PNP |
| Power Dissipation | 200 mW |
| Radiation Hardening | No |
| RoHS | Compliant |
| Transition Frequency | 190 MHz |
| Voltage Rating (DC) | -50 V |
| Width | 1.3 mm |
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