IXYS
| Reference | IXGH32N60BU1 |
|---|---|
| Ref. fabricant | IXGH32N60BU1 |
| Categorie | IGBT Transistors |
| Fabricant | IXYS |
| Case/Package | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Current Rating | 60 A |
| Element Configuration | Single |
| Lead Free | Lead Free |
| Max Collector Current | 60 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 200 W |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Number of Pins | 3.0 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reverse Recovery Time | 50 ns |
| Rise Time | 20 ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 100 ns |
| Turn-On Delay Time | 25 ns |
| Voltage Rating (DC) | 600 V |
| Weight | 6.500007 g |
Produits similaires
Demande de devis
Soumettez votre besoin et notre equipe commerciale vous repondra rapidement.
