| Numero de parte | SGB30N60 |
|---|---|
| N. parte del fabricante | SGB30N60 |
| Categoria | IGBT Transistors |
| Fabricante | Rochester Electronics |
| Case/Package | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Element Configuration | Single |
| Halogen Free | Halogen Free |
| Max Collector Current | 41 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 W |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3.0 |
| Packaging | |
| Radiation Hardening | No |
| RoHS | Compliant |
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