| Reference | SGB02N120ATMA1 |
|---|---|
| Ref. fabricant | SGB02N120ATMA1 |
| Categorie | IGBT Transistors |
| Fabricant | Infineon |
| Case/Package | TO-263 |
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Element Configuration | Single |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Lifecycle Status | NRND |
| Max Collector Current | 6.2 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 62 W |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Package Quantity | 1000.0 |
| Packaging | |
| Power Dissipation | 62 W |
| Radiation Hardening | No |
| RoHS | Compliant |
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