| Reference | SGD02N60BUMA1 |
|---|---|
| Ref. fabricant | SGD02N60BUMA1 |
| Categorie | IGBT Transistors |
| Fabricant | Infineon |
| Case/Package | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Element Configuration | Single |
| Halogen Free | Not Halogen Free |
| Lifecycle Status | NRND |
| Max Collector Current | 6 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 30 W |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3.0 |
| Package Quantity | 2500.0 |
| Packaging | |
| Power Dissipation | 30 W |
| RoHS | Compliant |
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