| Reference | HGTP20N60A4 |
|---|---|
| Ref. fabricant | HGTP20N60A4 |
| Categorie | IGBT Transistors |
| Fabricant | onsemi |
| Case/Package | TO-220AB |
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 1.8 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Contact Plating | Tin |
| Continuous Collector Current | 70 A |
| Current Rating | 70 A |
| Element Configuration | Single |
| Height | 9.4 mm |
| Lead Free | Lead Free |
| Length | 10.67 mm |
| Lifecycle Status | EOL |
| Manufacturer Lifecycle Status | LAST SHIPMENTS |
| Max Collector Current | 70 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 290 W |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Number of Pins | 3.0 |
| Packaging | Rail/Tube |
| Power Dissipation | 290 W |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Rise Time | 12 ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 73 ns |
| Turn-On Delay Time | 15 ns |
| Voltage Rating (DC) | 600 V |
| Weight | 1.8 g |
| Width | 4.83 mm |
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