Toshiba
| Reference | 2SK2719 |
|---|---|
| Ref. fabricant | 2SK2719 |
| Categorie | Mosfet - 779 |
| Fabricant | Toshiba |
| Continuous Drain Current (ID) | 3 A |
| Current Rating | 3 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Fall Time | 30 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 750 pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 125 W |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Number of Pins | 3.0 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 4.3 Ω |
| Rise Time | 15 ns |
| RoHS | Compliant |
| Voltage Rating (DC) | 900 V |
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