Toshiba
| Reference | 2SK3566Q |
|---|---|
| Ref. fabricant | 2SK3566Q |
| Categorie | Mosfet - 779 |
| Fabricant | Toshiba |
| Continuous Drain Current (ID) | 2.5 A |
| Current Rating | 2.5 A |
| Drain to Source Breakdown Voltage | 900 V |
| Drain to Source Resistance | 6.4 Ω |
| Element Configuration | Single |
| Fall Time | 80 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Number of Elements | 1.0 |
| Number of Pins | 3.0 |
| Packaging | Bulk |
| Power Dissipation | 400 W |
| Radiation Hardening | No |
| Rise Time | 104 ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 82 ns |
| Voltage Rating (DC) | 900 V |
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