TS1117BCW33

Product Category :

LDO Voltage Controllers

Manufacturer :

Taiwan Semiconductor

Breakdown Voltage :

51 V

Case/Package :

SOT-223

Clamping Voltage :

70.1 V

Collector Base Voltage (VCBO) :

-40 V

Collector Emitter Saturation Voltage :

-400 mV

Collector Emitter Voltage (VCEO) :

50 V

Continuous Collector Current :

-200 mA

Drain to Source Voltage (Vdss) :

-60 V

Dropout Voltage :

1.3 V

Emitter Base Voltage (VEBO) :

40 V

Forward Voltage :

1 V

Gain Bandwidth Product :

Gate to Source Voltage (Vgs) :

-1.5 V

hFE Min :

100.0

Input Bias Current :

5 mA

Input Capacitance :

436 pF

Lead Pitch :

2.35 mm

Lifecycle Status :

Manufacturer Lifecycle Status :

Max Breakdown Voltage :

9.8 V

Max Forward Surge Current (Ifsm) :

2.5 A

Max Input Voltage :

15 V

Max Junction Temperature (Tj) :

150 °C

Max Operating Temperature :

125 °C

Max Output Current :

1 A

Max Output Voltage :

3.3 V

Max Power Dissipation :

15 W

Max Repetitive Reverse Voltage (Vrrm) :

250 V

Max Reverse Leakage Current :

1 µA

Max Supply Voltage :

15 V

Min Breakdown Voltage :

25.4 V

Min Input Voltage :

0 V

Min Operating Temperature :

0 °C

Min Supply Voltage :

2 V

Nominal Output Voltage :

3.3 V

Nominal Supply Current :

25 nA

Number of Channels :

2.0

Number of Outputs :

1.0

Number of Pins :

3.0

Output Current :

1 A

Output Type :

Fixed

Output Voltage :

3.3 V

Peak Pulse Current :

21.4 A

Peak Pulse Power :

1.5 kW

Power Dissipation :

150 mW

Quiescent Current :

5 mA

REACH SVHC :

No SVHC

Reference Voltage :

1.25 V

Response Time :

1.3 µs

Reverse Recovery Time :

50 ns

Reverse Standoff Voltage :

24 V

RoHS :

Compliant

Termination :

SMD/SMT

Test Current :

2.5 mA

Voltage :

3.3 V

Width :

6.85 mm

Zener Voltage :

75 V