| Reference | BCR198SH6327XTSA1 |
|---|---|
| Ref. fabricant | BCR198SH6327XTSA1 |
| Categorie | Bipolar Transistors - Pre-Biased |
| Fabricant | Infineon |
| Case/Package | SOT |
| Collector Base Voltage (VCBO) | 10 V |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 300 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Element Configuration | Dual |
| Halogen Free | Halogen Free |
| Height | 800 µm |
| hFE Min | 70.0 |
| Input Resistance | 47 kΩ |
| Lead Free | Lead Free |
| Length | 2 mm |
| Lifecycle Status | NRND |
| Max Collector Current | 100 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 mW |
| Min Operating Temperature | -65 °C |
| Mount | Surface Mount |
| Number of Pins | 6.0 |
| Package Quantity | 3000.0 |
| Packaging | |
| Polarity | PNP |
| Power Dissipation | 250 mW |
| RoHS | Compliant |
| Transition Frequency | 190 MHz |
| Width | 1.25 mm |
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